Photodiode semiconductor device and manufacturing method

Details Photodiode semiconductor device and manufacturing method Photodiode semiconductor device and manufacturing method

2011-08-16

2011-08-16

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S233000, C257S231000, C257S448000, C257S435000, C257S293000

Reexamination Certificate

active

07999293

ABSTRACT:
The invention provides a semiconductor device manufactured with a plurality of photodiodes so that it does not short circuit, and includes an opening without leakage. A second semiconductor layer (12, 16) of second conductivity type is formed on a main surface of a first semiconductor layer (10, 11) of the first conductivity type. Element-separating regions (13, 14, 15, 17) are formed at least on the second semiconductor layer to separate the device into the regions of photodiodes (PD1-PD4). A conductive layer (18) is formed on the second semiconductor layer16in a divided pattern that provides a segment for each photodiode and is connected to the second semiconductor layer (16) along the an outer periphery with respect to all photodiodes. An insulation layer (19, 21) is formed on the entire surface to cover conductive layer (18). An opening, which reaches the second semiconductor layer (16), is formed in the insulation layer (19, 21) in the region inside the pattern of conductive layer (18).

REFERENCES:
patent: 5844290 (1998-12-01), Furumiya
patent: 2005/0051860 (2005-03-01), Takeuchi et al.
patent: 2005/0101073 (2005-05-01), Bae et al.
patent: 2006/0138580 (2006-06-01), Kim et al.

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