Solid-state imaging device and method for manufacturing same

Details Solid-state imaging device and method for manufacturing same Solid-state imaging device and method for manufacturing same

2011-06-14

2011-06-14

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S350000, C257SE27130, C257SE21002, C438S048000, C438S070000, C349S106000

Reexamination Certificate

active

07960769

ABSTRACT:
In a CMOS image sensor, an N-type semiconductor layer is formed on a P-type semiconductor substrate. P-type semiconductor regions are formed in one part of the semiconductor layer over the entire length of the thickness direction of the semiconductor layer in a lattice-like shape as viewed from above to compartment the semiconductor layer into a plurality of regions. Furthermore, a red filter, a green filter and a blue filter are provided in a red picture element, a green picture element and a blue picture element, respectively. Moreover, an N-type buried semiconductor layer being in contact with the semiconductor layer is formed in an immediately lower region of the red filter in an upper layer part of the semiconductor substrate.

REFERENCES:
patent: 2008/0251822 (2008-10-01), Yamaguchi et al.
patent: 2008-091781 (2008-04-01), None

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