Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2011-03-22
2011-03-22
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S701000, C257SE21090
Reexamination Certificate
active
07910464
ABSTRACT:
A semiconductor device of the present invention includes: a III-V nitride semiconductor layer including a channel region in which carriers travel; a concave portion provided in an upper portion of the channel region in the III-V nitride semiconductor layer; and a Schottky electrode consisting of a conductive material forming a Schottky junction with the semiconductor layer, and formed on a semiconductor layer, which spreads over the concave portion and peripheral portions of the concave portion, on the III-V nitride semiconductor layer. A dimension of the concave portion in a depth direction is set so that a portion of the Schottky electrode provided in the concave portion can adjust a quantity of the carriers traveling in the channel region.
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Hirose Yutaka
Murata Tomohiro
Tanaka Tsuyoshi
Uemoto Yasuhiro
McDermott Will & Emery LLP
Panasonic Corporation
Weiss Howard
LandOfFree
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