Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Reexamination Certificate
2011-01-25
2011-01-25
Nguyen, Kimberly D (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
C257S628000
Reexamination Certificate
active
07875959
ABSTRACT:
The channel of a MOSFET is selectively stressed by selectively stressing the silicide layers on the gate electrode and the source/drain. Stress in the silicide layer is selectively produced by orienting the larger dimensions of the silicide grains in a first direction and the smaller dimensions in a second, perpendicular direction, with one of the directions being parallel to the direction of carrier movement in the channel and the other direction being perpendicular thereto.
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Hu Chenming
Ke Chung-Hu
Lee Wen-Chin
Karimy Mohammad T
Nguyen Kimberly D
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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