Method for reading a multilevel cell in a non-volatile...

Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition

Reexamination Certificate

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Details

C711S100000, C711S118000, C711S154000

Reexamination Certificate

active

07917685

ABSTRACT:
A non-volatile memory device has a memory array comprising a plurality of memory cells. The array can operate in either a multilevel cell or single level cell mode and each cell has a lower page and an upper page of data. The memory device has a data latch for storing flag data and a cache latch coupled to the data latch. A read method comprises initiating a lower page read of a memory cell and reading, from the data latch, flag data that indicates whether a lower page read operation is necessary.

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