Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

2011-05-10

2011-05-10

Kebede, Brook (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21199

Reexamination Certificate

active

07939893

ABSTRACT:
A semiconductor device manufacturing method includes, forming isolation region having an aspect ratio of 1 or more in a semiconductor substrate, forming a gate insulating film, forming a silicon gate electrode and a silicon resistive element, forming side wall spacers on the gate electrode, heavily doping a first active region with phosphorus and a second active region and the resistive element with p-type impurities by ion implantation, forming salicide block at 500° C. or lower, depositing a metal layer covering the salicide block, and selectively forming metal silicide layers. The method may further includes, forming a thick and a thin gate insulating films, and performing implantation of ions of a first conductivity type not penetrating the thick gate insulating film and oblique implantation of ions of the opposite conductivity type penetrating also the thick gate insulating film before the formation of side wall spacers.

REFERENCES:
patent: 5304502 (1994-04-01), Hanagasaki
patent: 5736421 (1998-04-01), Shimomura et al.
patent: 6114226 (2000-09-01), Chang et al.
patent: 6150233 (2000-11-01), Horita et al.
patent: 6180462 (2001-01-01), Hsu
patent: 6225658 (2001-05-01), Watanabe
patent: 6436747 (2002-08-01), Segawa et al.
patent: 6569742 (2003-05-01), Taniguchi et al.
patent: 2-128465 (1990-05-01), None
patent: 3-18035 (1991-01-01), None
patent: 7-249762 (1995-09-01), None
patent: 9-135029 (1997-05-01), None
patent: 11-74353 (1999-03-01), None
patent: 11-87706 (1999-03-01), None
patent: 11-233609 (1999-08-01), None
patent: 2000-31295 (2000-01-01), None
patent: 2000-68388 (2000-03-01), None
patent: 2000-164727 (2000-06-01), None
patent: 2000-198523 (2000-07-01), None
patent: 2000-243958 (2000-09-01), None
patent: 2001-7220 (2001-01-01), None
patent: 2001-257273 (2001-09-01), None
patent: 2002-9281 (2002-01-01), None
patent: 2002-280459 (2002-09-01), None
patent: 2002-353330 (2002-12-01), None
patent: 2003-17580 (2003-01-01), None
patent: 2003-77856 (2003-03-01), None
Japanese Office Action mailing date of Jan. 12, 2010, issued in corresponding Japanese Patent Application 2005-500740.
Japanese Office Action mailing date of Sep. 15, 2009, issued in corresponding Japanese Patent Application 2005-500740.
International Search Report of PCT/JP03/07384, mailing date of Sep. 16, 2003.

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