Semiconductor device and a method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S379000

Reexamination Certificate

active

07898032

ABSTRACT:
The present invention realizes the miniaturization of a semiconductor device. On a first insulation film, an island-like semiconductor layer and a second insulation film which surrounds the semiconductor layer are formed, and resistance elements (for example, poly-silicon resistance elements) which are formed of a conductive film are arranged to be overlapped to an upper surface of the semiconductor layer in plane.

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patent: 6320241 (2001-11-01), Okamoto
patent: 6627954 (2003-09-01), Seefeldt
patent: 6693315 (2004-02-01), Kuroda et al.
patent: 7045865 (2006-05-01), Amishiro et al.
patent: 7221026 (2007-05-01), Bhattacharyya
patent: 1250229 (2000-04-01), None
patent: 2002-158278 (2002-03-01), None
patent: 2002-261244 (2002-09-01), None

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