Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-01
2011-03-01
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S379000
Reexamination Certificate
active
07898032
ABSTRACT:
The present invention realizes the miniaturization of a semiconductor device. On a first insulation film, an island-like semiconductor layer and a second insulation film which surrounds the semiconductor layer are formed, and resistance elements (for example, poly-silicon resistance elements) which are formed of a conductive film are arranged to be overlapped to an upper surface of the semiconductor layer in plane.
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Ipposhi Takashi
Suzuki Takaya
Miles & Stockbridge P.C.
Prenty Mark
Renesas Electronics Corporation
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