Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-12
2011-04-12
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S211000, C257S358000, C257S360000, C257S363000, C257S379000, C257S380000, C257S381000, C257S516000, C257S533000, C257S536000, C257S543000, C257S577000, C257S758000, C257S904000, C257SE27047, C257SE27071, C257SE27101, C257SE29176, C257SE27016, C257SE27033, C257SE27035
Reexamination Certificate
active
07923783
ABSTRACT:
A semiconductor memory device according to an embodiment of the present invention includes a resistance element which is constructed with a first conductor which extends in a first direction and is connected to a first contact; a second conductor which extends in said first direction and is connected to a second contact; and a first insulation film which exists between said first conductor and said second conductor, said first insulation film also having an opening in which a third conductor which connects said first conductor and said second conductor is arranged.
REFERENCES:
patent: 5489547 (1996-02-01), Erdeljac et al.
patent: 6218729 (2001-04-01), Zavrel et al.
patent: 6635937 (2003-10-01), Ootsuka et al.
patent: 6667507 (2003-12-01), Shirota et al.
patent: 6759729 (2004-07-01), Racanelli et al.
patent: 6921960 (2005-07-01), Ichige et al.
patent: 7180120 (2007-02-01), Won
patent: 7217981 (2007-05-01), Coolbaugh et al.
patent: 7288799 (2007-10-01), Saigoh et al.
patent: 7298020 (2007-11-01), Asano et al.
patent: 7485915 (2009-02-01), Nasu et al.
patent: 7518173 (2009-04-01), Hikosaka et al.
patent: 7592660 (2009-09-01), Nagai et al.
patent: 7605418 (2009-10-01), Song
patent: 7732895 (2010-06-01), Toda
patent: 2002/0149082 (2002-10-01), Nagano et al.
patent: 2005/0161723 (2005-07-01), Higuchi
patent: 2005/0269663 (2005-12-01), Minami et al.
patent: 2006/0220003 (2006-10-01), Noguchi et al.
patent: 2007/0152295 (2007-07-01), Yeh et al.
patent: 2008/0135910 (2008-06-01), Youn
patent: 2008/0258195 (2008-10-01), Sugawara et al.
patent: 2008/0258262 (2008-10-01), Nagai
patent: 2009/0298203 (2009-12-01), Nagai
patent: 2010/0019348 (2010-01-01), Nagai
patent: 2010/0084702 (2010-04-01), Fukuda et al.
patent: 2003-100888 (2003-04-01), None
patent: 2006-269504 (2006-10-01), None
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Soward Ida M
LandOfFree
Semiconductor memory device having resistance element with... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device having resistance element with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having resistance element with... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2655118