Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2011-08-23

2011-08-23

Roman, Angel (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S717000, C438S725000, C438S736000, C257SE21249

Reexamination Certificate

active

08003540

ABSTRACT:
A method for manufacturing a semiconductor device includes forming an underlying layer over a semiconductor substrate; forming a hard mask layer over the underlying layer; forming first etch patterns over the hard mask layer; forming second etch patterns between the first photoresist patterns; etching the hard mask layer using the first and second etch patterns as an etch mask to form a hard mask pattern; and etching the underlying layer using at least the hard mask pattern. The first and second etch patterns are formed on the same layer.

REFERENCES:
patent: 6284657 (2001-09-01), Chooi et al.
patent: 6569605 (2003-05-01), Bae
patent: 2002/0022195 (2002-02-01), Nakano et al.
patent: 2004/0072098 (2004-04-01), Kozawa et al.
patent: 2006/0127816 (2006-06-01), Kang et al.
patent: 2006/0228895 (2006-10-01), Chae et al.
patent: 2007/0020565 (2007-01-01), Koh et al.
patent: 2007/0243714 (2007-10-01), Shin et al.
patent: 10-2003/0049198 (2003-06-01), None
patent: 10-2006/0064861 (2006-06-01), None
patent: 10-2006/0084501 (2006-07-01), None
patent: 1020060084051 (2006-07-01), None
patent: 10-2006/0125210 (2006-12-01), None
patent: 10-2006/0133166 (2006-12-01), None
Toshiyuki Toyoshima, “0.1 u.m Level contact hole pattern formation with KrF lithography by Resist Enhancement Lithography Assisted by Chemical Shrink”, IEEE, 1998.
Laura J. Peters, “Resist Join the Sub-λ Revolution”, Semiconductor International, Sep. 1999.

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2653558