MOS transistor having an increased gate-drain capacitance

Details MOS transistor having an increased gate-drain capacitance MOS transistor having an increased gate-drain capacitance

2011-03-22

2011-03-22

Sandvik, Benjamin P (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S139000, C257S296000, C257S330000, C257SE27078, C257SE27095, C257SE29118, C257SE29274, C257SE29313, C257SE29318, C257SE21141, C257SE21629, C257SE21643, C257SE21577, C257SE21578, C438S141000, C438S238000, C438S239000, C438S259000, C438S270000, C438S271000, C438S589000

Reexamination Certificate

active

07910983

ABSTRACT:
A MOS transistor having an increased gate-drain capacitance is described. One embodiment provides a drift zone of a first conduction type. At least one transistor cell has a body zone, a source zone separated from the drift zone by the body zone, and a gate electrode, which is arranged adjacent to the body zone and which is dielectrically insulated from the body zone by a gate dielectric. At least one compensation zone of the first conduction type is arranged in the drift zone. At least one feedback electrode is arranged at a distance from the body zone, which is dielectrically insulated from the drift zone by a feedback dielectric and which is electrically conductively connected to the gate electrode.

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