Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2011-07-05

2011-07-05

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S164000, C257SE21415

Reexamination Certificate

active

07972912

ABSTRACT:
A method of fabricating a semiconductor device includes first providing an insulation substrate. A patterned conductive layer is formed over the insulation substrate, and the patterned conductive layer includes a channel region and a number of protruding regions. A gate structure layer is formed over the insulation substrate. The gate structure layer covers a part of the patterned conductive layer, and each of the protruding regions has an exposed region. A doping process is performed to dope at least the exposed region of the patterned conductive layer to form a number of S/D regions.

REFERENCES:
patent: 5986306 (1999-11-01), Nakajima et al.
patent: 7393733 (2008-07-01), Currie
patent: 2003/0066740 (2003-04-01), Inukai

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2652178