Semiconductor devices

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2011-01-25

2011-01-25

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000, C438S459000, C257S049000, C257S056000, C257S204000, C257SE23179

Reexamination Certificate

active

07875529

ABSTRACT:
Methods, devices, modules, and systems providing semiconductor devices in a stacked wafer system are described herein. One embodiment includes a first wafer for NMOS transistors in a CMOS architecture and a second wafer for PMOS transistors in the CMOS architecture, with the first wafer being bonded and electrically coupled to the second wafer to form at least one CMOS device. Another embodiment includes a number of DRAM capacitors formed on a first wafer and support circuitry associated with the DRAM capacitors formed on a second wafer, with the first wafer being bonded and electrically coupled to the second wafer to form a number of DRAM cells. Another embodiment includes a first wafer having a number of vertical transistors coupled to a data line and a second wafer having amplifier circuitry associated with the number of vertical transistors, with the first wafer being bonded and electrically coupled to the second wafer.

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