Method of forming nitride film and nitride structure

Details Method of forming nitride film and nitride structure Method of forming nitride film and nitride structure

2011-05-17

2011-05-17

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C257SE21090, C257SE21110, C117S088000

Reexamination Certificate

active

07943492

ABSTRACT:
A method of forming a nitride film by hydride vapor phase epitaxy, the method including: sequentially disposing at least one group III metal source including impurities and a substrate in an external reaction chamber and an internal reaction chamber sequentially located in the direction of gas supply and heating each of the external reaction chamber and the internal reaction chamber at a growth temperature; forming a metal chloride by supplying hydrogen chloride gas and carrier gas into the external reaction chamber to react with the group III metal source and transferring the metal chloride to the substrate; and forming the nitride film doped with the impurities on the substrate by reacting the transferred metal chloride with nitrogen source gas supplied to the internal reaction chamber.

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