Semiconductor FinFET structures with encapsulated gate...

Details Semiconductor FinFET structures with encapsulated gate... Semiconductor FinFET structures with encapsulated gate...

2011-03-29

2011-03-29

Sandvik, Benjamin P (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29040

Reexamination Certificate

active

07915682

ABSTRACT:
Semiconductor structures in which the gate electrode of a FinFET is masked from the process introducing dopant into the fin body of the FinFET to form source/drain regions and methods of fabricating such semiconductor structures. The gate doping, and hence the work function of the gate electrode, is advantageously isolated from the process that dopes the fin body to form the source/drain regions. The sidewalls of the gate electrode are covered by sidewall spacers that are formed on the gate electrode but not on the sidewall of the fin body.

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