Magnetic random access memory and write method of the same

Details Magnetic random access memory and write method of the same Magnetic random access memory and write method of the same

2011-03-29

2011-03-29

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S148000, C365S171000, C977S935000

Reexamination Certificate

active

07916521

ABSTRACT:
A magnetic random access memory includes a magnetoresistive effect element which includes a fixed layer in which a magnetization direction is fixed, a recording layer in which a magnetization direction is reversible, and a nonmagnetic layer formed between the fixed layer and the recording layer, and in which the magnetization directions in the fixed layer and the recording layer take one of a parallel state and an antiparallel state in accordance with a direction of an electric current supplied between the fixed layer and the recording layer, and a yoke layer which concentrates a magnetic field generated by the electric current, and causes the magnetic field to act on magnetization in the recording layer.

REFERENCES:
patent: 6844204 (2005-01-01), Asao
patent: 7190613 (2007-03-01), Nagase et al.
patent: 2004/0021189 (2004-02-01), Yoda et al.
patent: 2004/0100818 (2004-05-01), Yoda et al.
patent: 2006/0067008 (2006-03-01), Haratani
patent: 2006/0176734 (2006-08-01), Braun
patent: 2004-128011 (2004-04-01), None
patent: 2004-128430 (2004-04-01), None
patent: 2004-153181 (2004-05-01), None
patent: 2005-203535 (2005-07-01), None

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