DRAM unit cells, capacitors, methods of forming DRAM unit...

Details DRAM unit cells, capacitors, methods of forming DRAM unit... DRAM unit cells, capacitors, methods of forming DRAM unit...

2011-05-10

2011-05-10

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21649, C438S253000

Reexamination Certificate

active

07939877

ABSTRACT:
Some embodiments include methods of forming capacitors. A first capacitor storage node may be formed within a first opening in a first sacrificial material. A second sacrificial material may be formed over the first capacitor storage node and over the first sacrificial material, and a retaining structure may be formed over the second sacrificial material. A second opening may be formed through the retaining structure and the second sacrificial material, and a second capacitor storage node may be formed within the second opening and against the first storage node. The first and second sacrificial materials may be removed, and then capacitor dielectric material may be formed along the first and second storage nodes. Capacitor electrode material may then be formed along the capacitor dielectric material. Some embodiments include methods of forming DRAM unit cells, and some embodiments include DRAM unit cell constructions.

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patent: 2001/0026974 (2001-10-01), Reinberg

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