Nonvolatile semiconductor memory and process of producing...

Details Nonvolatile semiconductor memory and process of producing... Nonvolatile semiconductor memory and process of producing...

2011-01-25

2011-01-25

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21409, C257SE21690, C257SE21691, C257SE21693, C257SE29300, C257SE29309

Reexamination Certificate

active

07875922

ABSTRACT:
A nonvolatile semiconductor memory of an aspect of the present invention comprises a semiconductor substrate, a pillar-shaped semiconductor layer extending in the vertical direction with respect to the surface of the semiconductor substrate, a plurality of memory cells arranged in the vertical direction on the side surface of the semiconductor layer and having a charge storage layer and a control gate electrode, a first select gate transistor arranged on the semiconductor layer at an end of the memory cells on the side of the semiconductor substrate, and a second select gate transistor arranged on the semiconductor layer on the other end of the memory cells opposite to the side of the semiconductor substrate, wherein the first select gate transistor includes a diffusion layer in the semiconductor substrate and is electrically connected to the pillar-shaped semiconductor layer by way of the diffusion layer that serves as the drain region.

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