Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-03-29
2011-03-29
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S789000, C438S790000, C438S781000
Reexamination Certificate
active
07915180
ABSTRACT:
A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant.
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Gates Stephen M.
Grill Alfred
Miller Robert D.
Neumayer Deborah A.
Nguyen Son
International Business Machines - Corporation
Luu Chuong A.
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
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