Semiconductor memory device and methods for inspecting and manuf

Details Semiconductor memory device and methods for inspecting and manuf Semiconductor memory device and methods for inspecting and manuf

1999-01-08

2000-05-16

Nelms, David

Static information storage and retrieval

Read/write circuit

Bad bit

3651859, 365201, 3652257, G11C 700

Patent

active

06064608&

ABSTRACT:
A semiconductor memory device comprising a plurality of word lines that come in two types: ordinary word lines planned to be used ordinarily, and redundant word lines to be used to replace any ordinary word line judged faulty. Boosting transistors are incorporated to boost all bit lines forcibly to a supply voltage. When the bit lines are brought to the supply voltage while the word lines are connected to ground, a memory cell may be found written with data represented by the supply voltage on the bit lines. This reveals a short-circuit between a bit line and the word line corresponding to the memory cell. The short-circuited word line is then replaced by a redundant word line.

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patent: 5617364 (1997-04-01), Hatakeyama
patent: 5642316 (1997-06-01), Tran et al.
patent: 5801986 (1998-09-01), Matsumoto et al.

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