Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2011-03-22
2011-03-22
Le, Vu A (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S185170
Reexamination Certificate
active
07911838
ABSTRACT:
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To account for this coupling, the read process for a particular memory cell will provide compensation to an adjacent memory cell in order to reduce the coupling effect that the adjacent memory cell has on the particular memory cell.
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Le Vu A
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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