Spin-transfer torque memory self-reference read and write...

Details Spin-transfer torque memory self-reference read and write... Spin-transfer torque memory self-reference read and write...

2011-06-14

2011-06-14

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S100000, C365S097000, C365S148000, C365S189070

Reexamination Certificate

active

07961509

ABSTRACT:
A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

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