Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2011-06-28

2011-06-28

Garber, Charles D (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S317000, C257S318000, C257S319000, C257S320000, C257S321000, C257S322000

Reexamination Certificate

active

07968932

ABSTRACT:
A semiconductor device which is formed in a self-aligned manner without causing a problem of misalignment in forming a control gate electrode and in which a leak between the control gate electrode and a floating gate electrode is not generated, and a manufacturing method of the semiconductor device are provided. A semiconductor device includes a semiconductor film, a first gate insulating film over the semiconductor film, a floating gate electrode over the first gate insulating-film, a second gate insulating film which covers the floating gate electrode, and a control gate electrode over the second gate insulating film. The control gate electrode is formed so as to cover the floating gate electrode with the second gate insulating film interposed therebetween, the control gate electrode is provided with a sidewall, and the sidewall is formed on a stepped portion of the control gate-electrode, generated due to the floating gate electrode.

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Office Action re Chinese application No. CN 200610167595.5, dated Oct. 9, 2009 (with English translation).

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