Insulated-gate field-effect transistor

Details Insulated-gate field-effect transistor Insulated-gate field-effect transistor

2011-01-04

2011-01-04

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S330000, C257S334000, C257SE29201, C257SE29260

Reexamination Certificate

active

07863678

ABSTRACT:
An IGFET that can be turned off when a reverse voltage is applied. Included is a semiconductor substrate having formed therein an n-type drain region, p-type first body region, p−-type second body region, n-type first source region, and n+-type second source region. Trenches etched in the substrate receive gate electrodes via gate insulators. The source electrode is in ohmic contact with both first and second source regions and in schottky barrier contact with the second body region.

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