Semiconductor device

Details Semiconductor device Semiconductor device

2011-05-10

2011-05-10

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S339000, C257S331000, C257SE21438, C257SE29021

Reexamination Certificate

active

07939881

ABSTRACT:
A semiconductor device includes a gate electrode formed through a gate insulating film provided on a first impurity region and a drift layer, and this gate electrode consists of two regions including a first conductivity type second impurity region opposed to the first impurity region and a third impurity region capable of forming a depletion layer.

REFERENCES:
patent: 6015993 (2000-01-01), Voldman et al.
patent: 6084278 (2000-07-01), Mizushima
patent: 2005/0012147 (2005-01-01), Arnborg et al.
patent: 10-004189 (1998-01-01), None
patent: 11-214692 (1999-08-01), None

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