Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-10
2011-05-10
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257S339000, C257S331000, C257SE21438, C257SE29021
Reexamination Certificate
active
07939881
ABSTRACT:
A semiconductor device includes a gate electrode formed through a gate insulating film provided on a first impurity region and a drift layer, and this gate electrode consists of two regions including a first conductivity type second impurity region opposed to the first impurity region and a third impurity region capable of forming a depletion layer.
REFERENCES:
patent: 6015993 (2000-01-01), Voldman et al.
patent: 6084278 (2000-07-01), Mizushima
patent: 2005/0012147 (2005-01-01), Arnborg et al.
patent: 10-004189 (1998-01-01), None
patent: 11-214692 (1999-08-01), None
Ditthavong Mori & Steiner, P.C.
Lam Cathy N
Nguyen Cuong Q
Sanyo Electric Co,. Ltd.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2644187