Embedded dram with noise-protected differential capacitor memory

Details Embedded dram with noise-protected differential capacitor memory Embedded dram with noise-protected differential capacitor memory

1998-03-30

2000-05-16

Tran, Andrew Q.

Static information storage and retrieval

Systems using particular element

Capacitors

365 63, 365214, G11C 1124

Patent

active

060645881

ABSTRACT:
A logically complementary pair of charge storage capacitors are employed in each memory cell of an embedded dynamic random access memory (DRAM) segment. The complementary capacitors establish a data bit signal from each cell by a relative difference in charge stored on the capacitors. The adverse influences of noise are reduced or eliminated because the noise will generally equally effect both of the complementary capacitors, as well as complementary bit lines connected to the capacitors. Differential sensing of the bit line signals also avoids the influence of noise. A capacitor reference potential conductor distributes substantially equal capacitor reference voltage to each capacitor to allow each capacitor to charge and discharge more uniformly under the influence of noise.

REFERENCES:
patent: 4866676 (1989-09-01), Crisp et al.
patent: 5208778 (1993-05-01), Kumanoya et al.
patent: 5231319 (1993-07-01), Crafts et al.
patent: 5270977 (1993-12-01), Iwamoto et al.
patent: 5323348 (1994-06-01), Mori et al.
patent: 5325334 (1994-06-01), Roh et al.
patent: 5373472 (1994-12-01), Ohsawa
patent: 5375095 (1994-12-01), Yamada et al.
patent: 5386386 (1995-01-01), Ogihara
patent: 5388104 (1995-02-01), Shirotori
patent: 5440517 (1995-08-01), Morgan et al.
patent: 5471482 (1995-11-01), Byers et al.
patent: 5502675 (1996-03-01), Kohno et al.
patent: 5517450 (1996-05-01), Ohsawa et al.
patent: 5577004 (1996-11-01), Leshem
patent: 5623640 (1997-04-01), Nakabo
patent: 5650975 (1997-07-01), Hamade et al.
patent: 5668755 (1997-09-01), Hidaka
patent: 5689466 (1997-11-01), Quereshi
patent: 5694355 (1997-12-01), Skjaveland et al.
patent: 5825682 (1998-10-01), Fukui
"Automatic Small Computer System Interface Termination Circuit for Narrow/Wide Devices on Wide Bus" IBM Technical Disclosure Bulletin. vol. 40, No. 4, Apr. 1997, New York, US, pp. 79-82, XP000728275.
"BI-0316 Mass Storage Module" Dec. 6, 1996, Brand Innovators B.V. XP002071927. Available from Internet <URL:http//www.brandinnovators.com/manual/bi0316/book-33.htm>.

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