Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-02-01
2011-02-01
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29167, C257S421000, C257SE29323, C438S003000, C428S811200, C365S158000, C360S324100, C360S324120
Reexamination Certificate
active
07880209
ABSTRACT:
A free ferromagnetic data storage layer of an MRAM cell is coupled to a free ferromagnetic stabilization layer, which stabilization layer is directly electrically coupled to a contact electrode, on one side, and is separated from the free ferromagnetic data storage layer, on an opposite side, by a spacer layer. The spacer layer provides for the coupling between the two free layers, which coupling is one of: a ferromagnetic coupling and an antiferromagnetic coupling.
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Dimitrov Dimitar V.
Gao Kaizhong
Xi Haiwen
Xue Song S.
Fellers , Snider, et al.
Seagate Technology LLC
Wilczewski Mary
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