Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-29
2011-03-29
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S300000, C257S298000, C257S306000, C438S396000, C438S253000, C438S381000
Reexamination Certificate
active
07915656
ABSTRACT:
A nonvolatile semiconductor memory apparatus (10) of the present invention comprises a semiconductor substrate (11), an active element forming region provided on the semiconductor substrate (11) and including a plurality of active elements (12), a wire forming region which is provided on the active element forming region to electrically connect the active elements (12) and includes plural layers of semiconductor electrode wires (15, 16), a memory portion forming region (100) which is provided above the wire forming region and provided with memory portions (26) arranged in matrix, a resistance value of each of the memory portions changing according to electric pulses applied, and an oxygen barrier layer (17) which is provided between the memory portion forming region (100) and the wire forming region so as to extend continuously over at least an entire of the memory portion forming region (100).
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Mikawa Takumi
Takagi Takeshi
Luu Chuong A.
McDermott Will & Emery LLP
Panasonic Corporation
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