Method for detecting lithographically significant defects on...

Details Method for detecting lithographically significant defects on... Method for detecting lithographically significant defects on...

2011-01-18

2011-01-18

Werner, Brian P (Department: 2624)

Image analysis

Applications

Manufacturing or product inspection

Reexamination Certificate

active

07873204

ABSTRACT:
A method for identifying lithographically significant defects. A photomask is illuminated to produce images that experience different parameters of the reticle as imaged by an inspection tool. Example parameters include a transmission intensity image and a reflection intensity image. The images are processed together to recover a band limited mask pattern associated with the photomask. A model of an exposure lithography system for chip fabrication is adapted to accommodate the band limited mask pattern as an input which is input into the model to obtain an aerial image of the mask pattern that is processed with a photoresist model yielding a resist-modeled image. The resist-modeled image is used to determine if the photomask has lithographically significant defects.

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Kikuiri et al., “Development of Advanced Reticle Inspection Apparatus For Hp 65 Nm Node Device and Beyond,” Photomask and Next-Generation Lithography Mask Technology XIII, Edited by Hoga, Morihisa. Proceedings of the SPIE, vol. 6283, pp. 62830Y (2006).

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