Semiconductor memory device having memory cell and reference...

Details Semiconductor memory device having memory cell and reference... Semiconductor memory device having memory cell and reference...

2011-03-01

2011-03-01

Dinh, Son (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S189011, C365S210150

Reexamination Certificate

active

07898888

ABSTRACT:
A semiconductor memory device includes a sense amplifier, first and second bit lines connected to the sense amplifier, a first reference cell connected to the first bit line, and a second reference cell connected to the second bit line. A reference potential is simultaneously written to the first and second reference cells. Further, a dummy cell may be provided to be simultaneously, with the reference cell, with the reference potential.

REFERENCES:
patent: 5392240 (1995-02-01), Muraoka
patent: 5801586 (1998-09-01), Ishizuka
patent: 7327622 (2008-02-01), Hamada
patent: 2006/0221669 (2006-10-01), Hamada
patent: 6-12860 (1994-01-01), None
patent: 10-135417 (1998-05-01), None
patent: 2006-278778 (2006-10-01), None

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