Protection for bonding pads and methods of formation

Details Protection for bonding pads and methods of formation Protection for bonding pads and methods of formation

2011-01-18

2011-01-18

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Chip mounted on chip

C438S109000, C257SE23020

Reexamination Certificate

active

07872357

ABSTRACT:
The formation of bonding pad protective layer over exposed bonding pad materials between stacked integrated circuit (IC) dies or wafers is described in preferred embodiments in which the bonding pad protective layer is formed in the integrated process of forming wafer bonding pads. The bonding pad protective layer prevents the exposed bonding pad materials from oxidation and corrosion in open-air or other harsh environments. By providing a bonding pad protective layer on exposed bonding pad materials, significant product reliability improvement is expected on ICs having a three-dimensional “stacked-die” configuration.

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