Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-07
2011-06-07
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S637000, C438S638000, C438S639000
Reexamination Certificate
active
07955976
ABSTRACT:
The present invention relates to methods of forming semiconductor structures. The methods may include disposing electrically conductive material within an opening in a first dielectric material, passivating an upper surface of the electrically conductive material and introducing materials to form an interlayer dielectric upon the passivated upper surface. The present invention also includes methods of passivating surfaces of a semiconductor structure with a nitrogen-containing species.
REFERENCES:
patent: 5318924 (1994-06-01), Lin et al.
patent: 5405492 (1995-04-01), Moslehi
patent: 5447887 (1995-09-01), Filipiak et al.
patent: 5470789 (1995-11-01), Misawa
patent: 5529954 (1996-06-01), Iijima et al.
patent: 5591671 (1997-01-01), Kim et al.
patent: 5592024 (1997-01-01), Aoyama et al.
patent: 5602053 (1997-02-01), Zheng et al.
patent: 5633200 (1997-05-01), Hu
patent: 5652182 (1997-07-01), Cleeves
patent: 5659201 (1997-08-01), Wollesen
patent: 5714418 (1998-02-01), Bai et al.
patent: 5780908 (1998-07-01), Sekiguchi et al.
patent: 5861675 (1999-01-01), Sasaki et al.
patent: 5876788 (1999-03-01), Bronner et al.
patent: 5935871 (1999-08-01), Farkas et al.
patent: 6001726 (1999-12-01), Nagabushnam et al.
patent: 6069068 (2000-05-01), Rathore et al.
patent: 6077774 (2000-06-01), Hong et al.
patent: 6114238 (2000-09-01), Liao
patent: 6150257 (2000-11-01), Yin et al.
patent: 6184124 (2001-02-01), Hasegawa et al.
patent: 6249056 (2001-06-01), Kwon et al.
patent: 6790762 (2004-09-01), Yin et al.
patent: 6872429 (2005-03-01), Chen et al.
patent: 7279414 (2007-10-01), Yin et al.
patent: 69140397 (1994-05-01), None
Hougen et al., “Chapter 10: Adsorption,” Chemical Process Principles, Second Edition, John Wiley and Sons, Inc (1954), pp. 368-393.
Merriam-Webster's Collegiate Dictionary, 605 (10th ed. 1993), definition of in-situ, p. 605.
Jost Mark
Yin Zhiping
Le Dung A.
Micro)n Technology, Inc.
TraskBritt
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