Methods of forming semiconductor structures

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S622000, C438S637000, C438S638000, C438S639000

Reexamination Certificate

active

07955976

ABSTRACT:
The present invention relates to methods of forming semiconductor structures. The methods may include disposing electrically conductive material within an opening in a first dielectric material, passivating an upper surface of the electrically conductive material and introducing materials to form an interlayer dielectric upon the passivated upper surface. The present invention also includes methods of passivating surfaces of a semiconductor structure with a nitrogen-containing species.

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