Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2011-04-05

2011-04-05

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257SE29118

Reexamination Certificate

active

07919811

ABSTRACT:
A semiconductor device includes a second-conductivity-type base region provided on a first-conductivity-type semiconductor layer, a first-conductivity-type source region provided on the second-conductivity-type base region, a gate insulating film covering an inner wall of a trench which passes through the second-conductivity-type base region and reaching the first-conductivity-type semiconductor layer, a gate electrode buried in the trench via the gate insulating film, and a second-conductivity-type region being adjacent to the second-conductivity-type base region below the first-conductivity-type source region, spaced from the gate insulating film, and having a higher impurity concentration than the second-conductivity-type base region. c≧d is satisfied, where d is a depth from an upper surface of the first-conductivity-type source region to a lower end of the gate electrode, and c is a depth from an upper surface of the first-conductivity-type source region to a lower surface of the second-conductivity-type base region.

REFERENCES:
patent: 6734494 (2004-05-01), Ohtani
patent: 7061047 (2006-06-01), Ono et al.
patent: 7161208 (2007-01-01), Spring et al.
patent: 7166891 (2007-01-01), Yoshimochi
patent: 7230297 (2007-06-01), Ono et al.
patent: 2006/0208314 (2006-09-01), Kaneko
patent: 11-354780 (1999-12-01), None
patent: 2003-533889 (2003-11-01), None
patent: 2004-303964 (2004-10-01), None
patent: 3677489 (2005-05-01), None
patent: 2007-59632 (2007-03-01), None
patent: 2007-110047 (2007-04-01), None
patent: WO 2006/134810 (2006-12-01), None

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