Semiconductor memory device and manufacturing method thereof

Details Semiconductor memory device and manufacturing method thereof Semiconductor memory device and manufacturing method thereof

2011-04-19

2011-04-19

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257SE29129, C257SE29132, C257SE29309

Reexamination Certificate

active

07928496

ABSTRACT:
A nonvolatile semiconductor memory device having high charge retention characteristics and capable of improving leakage characteristics of a dielectric film disposed between a charge storage layer and a control gate electrode, and manufacturing method thereof is disclosed. According to one aspect, there is provided a semiconductor memory device comprising a first electrode disposed on a first insulator on a semiconductor substrate, a second insulator disposed on the first electrode, a second electrode disposed on the second insulator, and diffusion layers disposed in the semiconductor substrate, wherein the second insulator including a silicon-rich silicon nitride film containing more silicon than that in a stoichiometric silicon nitride film, and a silicon oxide film formed on the silicon-rich silicon nitride film, and wherein the silicon-rich silicon nitride film has a ratio of a silicon concentration and a nitrogen concentration set to 1:0.9 to 1:1.2.

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Kärcher, et al., “Electronic structure of hydrogenated and unhydrogenated amorphous SiNx(0≦x≦1.6): A photoemission study”, Physical Review B, vol. 30, No. 4, pp. 1896-1910, (Aug. 15, 1984).
Notification of Reasons for Rejection mailed Mar. 31, 2009, from the Japanese Patent Office in counterpart Japanese Application No. 2006-160084, and an English language translation thereof.

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