Trench IGBT with depletion stop layer

Details Trench IGBT with depletion stop layer Trench IGBT with depletion stop layer

2011-06-07

2011-06-07

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29063

Reexamination Certificate

active

07956419

ABSTRACT:
A very low VCEONnon punch through trench IGBT built-in non-epitaxial float zone silicon has a depletion stop layer structure added to its bottom surface.

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patent: 6482681 (2002-11-01), Francis et al.
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patent: 6707111 (2004-03-01), Francis et al.
patent: 6753580 (2004-06-01), Francis et al.
patent: 2002-314083 (2002-10-01), None
patent: 2003-533047 (2003-11-01), None

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