Multi-fin multi-gate field effect transistor with tailored...

Details Multi-fin multi-gate field effect transistor with tailored... Multi-fin multi-gate field effect transistor with tailored...

2011-02-15

2011-02-15

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257SE27014

Reexamination Certificate

active

07888750

ABSTRACT:
Disclosed are embodiments of an improved multi-gated field effect transistor (MUGFET) structure and method of forming the MUGFET structure so that it exhibits a more tailored drive current. Specifically, the MUGFET incorporates multiple semiconductor fins in order to increase effective channel width of the device and, thereby, to increase the drive current of the device. Additionally, the MUGFET incorporates a gate structure having different sections with different physical dimensions relative to the semiconductor fins in order to more finely tune device drive current (i.e., to achieve a specific drive current). Optionally, the MUGFET also incorporates semiconductor fins with differing widths in order to minimize leakage current caused by increases in drive current.

REFERENCES:
patent: 6909147 (2005-06-01), Aller et al.
patent: 7094650 (2006-08-01), Chaudhary et al.
patent: 7098502 (2006-08-01), Mathew et al.
patent: 7560785 (2009-07-01), Yu et al.
patent: 2002/0113277 (2002-08-01), Mehrotra et al.
patent: 2005/0215014 (2005-09-01), Ahn et al.
patent: 2009/0057780 (2009-03-01), Wong et al.
U.S. Appl. No. 11/556,844, filed Nov. 6, 2006, Schepis, et al., Pending Publication.

Affiliated with

Also associated with

Rating

Multi-fin multi-gate field effect transistor with tailored... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multi-fin multi-gate field effect transistor with tailored..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-fin multi-gate field effect transistor with tailored... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2639488