Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-03-08
2011-03-08
Blum, David S (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S435000, C257SE21546, C257SE29020, C257SE29255
Reexamination Certificate
active
07902036
ABSTRACT:
A method of fabricating a semiconductor device includes forming trench-like recesses in a semiconductor substrate, the recesses including one or more recesses each of which has an opening width of not more than a predetermined value, forming a first insulating film above the substrate after the recesses have been formed, so that one or a plurality of voids are formed in the one or more recesses whose opening widths are not more than the predetermined value, removing part of the first insulating film so that a beam is left which spans the openings so that the beam passes over upper surfaces of the one or more recesses and so that at least the voids are exposed in a portion of the substrate except the beam, and filling the voids in the recesses with a material with fluidity, thereby forming second insulating films in the recesses.
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patent: 7358190 (2008-04-01), Kim et al.
patent: 7402499 (2008-07-01), Kitamura et al.
patent: 2008/0182381 (2008-07-01), Kiyotoshi
patent: 2006-339446 (2006-12-01), None
Blum David S
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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