Flash memory device and method of fabricating the same

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation

Reexamination Certificate

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C438S584000, C438S585000, C438S586000, C438S588000, C438S760000, C438S780000, C257S314000, C257S315000, C257S316000, C257S317000, C257S318000, C257S319000, C257S320000, C257S321000, C257S322000, C257S323000, C257S324000, C257SE27078, C257SE29300, C257SE29309, C257SE21179, C257SE21182, C257SE21209, C257SE21210, C257SE21422, C257SE21423, C257SE21679, C257SE21694

Reexamination Certificate

active

07977226

ABSTRACT:
A flash memory device and a method for fabricating the same are disclosed. The flash memory device includes an ONO layer on a substrate, polysilicon gates on the ONO layer, a gate oxide layer on the substrate, the ONO layer and the polysilicon gates, and a low temperature oxide layer and polysilicon sidewall spacers on outer side surfaces of the polysilicon gates, except in a region between nearest adjacent polysilicon gates.

REFERENCES:
patent: 2006/0239083 (2006-10-01), Lee

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