Nonvolatile memory device comprising a programming and...

Error detection/correction and fault detection/recovery – Pulse or data error handling – Memory testing

Reexamination Certificate

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C714S733000

Reexamination Certificate

active

07975191

ABSTRACT:
A method and circuitry for checking the programming (P) and deletion (L) operations of memory cells (5) in a nonvolatile memory device (1). Parallel to the programming (P) or deletion (L) operations of the actual memory cells (5) the respective programming or deletion process is carried out on at least one similar checking cell (4.1, 4.2, 4.3), with the programming (P) or deletion (L) operations being less favorable by a defined extent than the programming (P) or deletion (L) operations of the actual memory cells (5). From the content of the checking cell (4.1, 4.2, 4.3) an evaluation device (6) determines whether the programming (P) or deletion (L) operation was successful or not, and a corresponding output signal (ak) indicative thereof is produced.

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