Semiconductor device including memory cell and anti-fuse...

Details Semiconductor device including memory cell and anti-fuse... Semiconductor device including memory cell and anti-fuse...

2011-07-19

2011-07-19

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27062

Reexamination Certificate

active

07982270

ABSTRACT:
A semiconductor device includes an anti-fuse portion and a memory cell portion each including a MOSFET structure having a gate insulating film formed on a semiconductor substrate and a gate electrode formed on the gate insulating film; wherein a depletion ratio in the gate electrode of the anti-fuse portion is different from the depletion ratio in the gate electrode of the memory cell portion, and the depletion ratio in the gate electrode of the anti-fuse portion is lower than the depletion ratio in the gate electrode of the memory cell portion.

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Yasuhiro Fukaura, et al., “A Highly Manufacturable High Density embedded SRAM Technology for 90nm CMOS”, IEDM 2002, pp. 415-418.

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