Semiconductor storage device and driving method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S208000, C257S273000, C257S560000

Reexamination Certificate

active

07893478

ABSTRACT:
This disclosure concerns a semiconductor storage device comprising a semiconductor layer provided on the insulation layer provided on the semiconductor substrate; a source layer and a drain layer provided in the semiconductor layer; a body provided between the source layer and the drain layer, the body being in an electrically floating state; an emitter layer contacting with the source layer, the emitter layer having an opposite conductive type to the source layer; a word line including the source layer, the drain layer, and the body, the word line being provided to memory cells arrayed in a first direction in a plurality of tow-dimensionally arranged memory cells; a source line connected to the source layers of the memory cells arrayed in the first direction; and a bit line connected to the drain layers of the memory cells arrayed in a second direction intersecting the first direction.

REFERENCES:
patent: 6104045 (2000-08-01), Forbes et al.
patent: 6825524 (2004-11-01), Ikehashi et al.
patent: 7301195 (2007-11-01), Nakajima et al.
patent: 2004/0159853 (2004-08-01), Nemati et al.
patent: 2005/0001232 (2005-01-01), Bhattacharyya
patent: 2006/0181919 (2006-08-01), Forbes

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