Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-05-17
2011-05-17
Vu, David (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257S070000
Reexamination Certificate
active
07943447
ABSTRACT:
The present invention includes methods to crystallize amorphous silicon. A structure including a conductive film with at least one conductive layer in thermal contact with an amorphous silicon (a-Si) layer to be crystallized is exposed to an alternating or varying magnetic field. The conductive film is more easily heated by the alternative or varying magnetic field, which, in-turn, heats the a-Si film and crystallizes it while keeping the substrate at a low enough temperature to avoid damage to or bending of the substrate. The method can be applied to the fabrication of many semiconductor devices, including thin film transistors and solar cells.
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Brown & Michaels PC
Campbell Shaun
Vu David
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