Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-07
2011-06-07
Maldonado, Julio J (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S396000, C257SE21019, C257SE21396
Reexamination Certificate
active
07956400
ABSTRACT:
An integrated metal-insulator-metal capacitor is formed so that there is an extension portion of its top plate that does not face any portion of the bottom plate, and an extension portion of its bottom plate that does not face any portion of the top plate. Vias connecting the MIM capacitor plates to conductors in an overlying metallization layer are formed so as to contact the extension portions of the top and bottom plates. Etching of the via holes is simplified because it is permissible for the via holes to punch through the extension portions of the capacitor plates. The bottom plate of the MIM capacitor is inlaid. The top plate of the MIM capacitor may be inlaid.
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Freescale Semiconductor Inc.
Maldonado Julio J
Scarlett Shaka
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