Dielectric material with a reduced dielectric constant and...

Details Dielectric material with a reduced dielectric constant and... Dielectric material with a reduced dielectric constant and...

2011-05-24

2011-05-24

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C438S619000

Reexamination Certificate

active

07948084

ABSTRACT:
In a first aspect, a first method of manufacturing a dielectric material with a reduced dielectric constant is provided. The first method includes the steps of (1) forming a dielectric material layer including a trench on a substrate; and (2) forming a cladding region in the dielectric material layer by forming a plurality of air gaps in the dielectric material layer along at least one of a sidewall and a bottom of the trench so as to reduce an effective dielectric constant of the dielectric material. Numerous other aspects are provided.

REFERENCES:
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patent: 2007/0173073 (2007-07-01), Weber
patent: WO 02/058134 (2002-07-01), None

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