Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-14
2011-06-14
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S040000, C257S296000, C257SE27088, C257SE51024
Reexamination Certificate
active
07960771
ABSTRACT:
A memory element is formed by providing an organic compound between a pair of upper and lower electrodes. However, when the electrode is formed over a layer containing an organic compound, a temperature is limited because the layer containing the organic compound can be influenced depending on a temperature for forming the electrode. A forming method for the electrode is limited due to this limitation of a temperature. Therefore, there are problems that an expected electrode cannot be formed, and miniaturization of an element is inhibited. A semiconductor device includes a memory element and a switching element which are provided over a substrate having an insulating surface. The memory element includes first and second electrodes, and a layer containing an organic compound, which are provided on the same plane. A current flows from the first electrode to the second electrode. The first electrode is electrically connected to the switching element.
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Office Action (Application No. 200610111014.6) dated Jun. 5, 2009.
Kato Kiyoshi
Sato Takehisa
Fahmy Wael M
Kalam Abul
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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