Digital radiography imager with buried interconnect layer in...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S288000, C257S347000, C257SE21170, C257SE21042, C257SE21051, C257SE21213, C257SE21247, C257SE21320, C257SE21370, C257SE21352, C257SE21692

Reexamination Certificate

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07948017

ABSTRACT:
A method of forming an imaging array includes providing a single crystal silicon substrate having an internal separation layer, forming a patterned conductive layer proximate a first side of the single crystal silicon substrate, forming an electrically conductive layer on the first side of the single crystal silicon substrate and in communication with the patterned conductive layer, securing the single crystal silicon substrate having the patterned conductive layer and electrically conductive layer formed thereon to a glass substrate with the first side of the single crystal silicon substrate proximate the glass substrate, separating the single crystal silicon substrate at the internal separation layer to create an exposed surface opposite the first side of the single crystal silicon substrate and forming an array comprising a plurality of photosensitive elements and readout elements on the exposed surface.

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patent: 7285477 (2007-10-01), Bernstein et al.

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