Image sensor and method of fabricating the same

Details Image sensor and method of fabricating the same Image sensor and method of fabricating the same

2011-08-02

2011-08-02

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S233000, C257S291000, C257S293000, C257SE27133

Reexamination Certificate

active

07989858

ABSTRACT:
Provided are an image sensor and a method of fabricating the same. The image sensor according to an embodiment includes a semiconductor substrate including a circuit region; a metal interconnection layer including a metal interconnection and an interlayer dielectric on the semiconductor substrate; a plurality of first pixel isolation layers on the interlayer dielectric, each of the first pixel isolation layers protruding above a top surface of the interlayer dielectric; and a light receiving portion between the first pixel isolation layers, the light receiving portion including protruding portions along sidewalls of the first pixel isolation layers.

REFERENCES:
patent: 2008/0079102 (2008-04-01), Chen et al.
patent: 61-251068 (1986-11-01), None
patent: 2000-156488 (2000-06-01), None
patent: 10-2003-0001116 (2003-01-01), None
patent: 10-2004-0042830 (2005-12-01), None
patent: 10-2006-7017146 (2006-11-01), None

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