Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-02-22
2011-02-22
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S202000, C257S327000, C257S335000, C257S336000, C257S343000, C257S344000, C257S365000, C257S401000, C257S408000, C257S900000, C257SE21421, C257SE21626, C257SE21640
Reexamination Certificate
active
07893504
ABSTRACT:
Disclosed are a non-volatile semiconductor memory device capable of simplifying the complicated structure of a transistor, and a fabrication method for the same. The non-volatile semiconductor memory device includes a semiconductor substrate including a plurality of active regions, gate electrodes formed over the respective active regions of the semiconductor substrate, gate spacers formed over both sides of each of the gate electrodes, common source/drain regions formed on the surface of the semiconductor substrate at both sides of the gate electrode including the gate spacers, an interlayer dielectric formed over the whole surface of a resultant structure including the substrate, gate electrodes, gate spacers and common source/drain regions, and contact plugs penetrating the interlayer dielectric, and connecting the common source/drain regions to a data line, wherein the contact plugs are made from a material which becomes electrically conductive when in contact with light and becomes non-conductive when out of contact with light.
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Dongbu Hi-Tek Co., Ltd.
Sherr & Vaughn, PLLC
Soward Ida M
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