Method for forming a laminated structure having a...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S151000, C438S585000, C438S665000, C257SE21174, C257SE21159

Reexamination Certificate

active

08003533

ABSTRACT:
A disclosed laminated structure includes a wettability-variable layer containing a wettability-variable material whose surface energy changes when energy is applied thereto and including at least a high-surface-energy area having high surface energy and a low-surface-energy area having low surface energy; and a conductive layer formed on the high-surface-energy area. The high-surface-energy area includes a first area and a second area extending from the first area and having a width smaller than that of the first area.

REFERENCES:
patent: 7365008 (2008-04-01), Hirai et al.
patent: 2003/0059987 (2003-03-01), Sirringhaus et al.
patent: 2004/0238816 (2004-12-01), Tano et al.
patent: 2005/0071969 (2005-04-01), Sirringhaus et al.
patent: 2005/0163938 (2005-07-01), Yamazaki et al.
patent: 2008/0315428 (2008-12-01), Fujii
patent: 1 282 175 (2003-02-01), None
patent: 2005-12181 (2005-01-01), None
patent: 2005-310962 (2005-11-01), None
patent: 2006-278534 (2006-10-01), None
patent: WO 2004/066477 (2004-08-01), None
U.S. Appl. No. 12/144,079, filed Jun. 23, 2008, Yamaga, et al.

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