Method for transferring semiconductor element, method for...

Details Method for transferring semiconductor element, method for... Method for transferring semiconductor element, method for...

2011-08-02

2011-08-02

Ngo, Ngan (Department: 2893)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S458000, C438S459000, C438S763000, C257SE21600

Reexamination Certificate

active

07989304

ABSTRACT:
A transistor formed on a monocrystalline Si wafer is temporarily transferred onto a first temporary supporting substrate. The first temporarily supporting substrate is heat-treated at high heat so as to repair crystal defects generated in a transistor channel of the monocrystalline Si wafer when transferring the transistor. The transistor is then made into a chip and transferred onto a TFT substrate. In order to transfer the transistor which has been once separated from the monocrystalline Si wafer, a different method from a stripping method utilizing ion doping is employed.

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Utsunomiya, T. et al., SUFTLA (Surface Free Technology by Laser Ablation/Annealing), AM-LCD '02, pp. 37-40.
International Search Report for PCT/JP2006/324845, mailed Mar. 20, 2007.

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