Power semiconductor devices integrated with clamp diodes...

Details Power semiconductor devices integrated with clamp diodes... Power semiconductor devices integrated with clamp diodes...

2011-05-03

2011-05-03

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S342000, C257S343000, C438S270000

Reexamination Certificate

active

07936014

ABSTRACT:
A structure of power semiconductor device integrated with clamp diodes having separated gate metal pad is disclosed. The separated gate metal pads are wire bonded together on the gate lead frame. This improved structure can prevent the degradation of breakdown voltage due to electric field in termination region blocked by polysilicon.

REFERENCES:
patent: 7843004 (2010-11-01), Darwish
patent: 7863682 (2011-01-01), Okuno et al.

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